Parça numarası FF100R12RT4 Üretici firma Infineon Technologies Kategoriler IGBT Modules RoHS Veri Sayfası FF100R12RT4 Açıklama IGBT Modules IGBT Module w/ IGBT & Diode
Üretici firma Infineon Technologies Kategoriler IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2 V Gate-Emitter Leakage Current 100 nA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Packaging Tray Pd - Power Dissipation 555 W Product IGBT Silicon Modules