- Parça numarası
- G3R40MT12D
- Üretici firma
- GeneSiC Semiconductor
- Kategoriler
- MOSFET
- RoHS
- Veri Sayfası
- Açıklama
- MOSFET 1200V 40mO TO-247-3 G3R SiC MOSFET
G3R40MT12D
Görüntüler sadece referans içindir
Özellikler
- Üretici firma
- GeneSiC Semiconductor
- Kategoriler
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 63 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 297 W
- Qg - Gate Charge
- 88 nC
- Rds On - Drain-Source Resistance
- 40 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Son Yorumlar
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
packed pretty good, all is ok,-seller.
Julianah Yungkim
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Looks good
Michael Beck
Şunlar da hoşunuza gidebilir
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
G3R40MT12D görüntüleyen kişiler daha sonra satın alındı
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
G3R40MT12D Haberler
03/14/2023
03/13/2023
03/09/2023
G3R4 ile alakalı anahtar kelimeler
- G3R40MT12D Entegre
- G3R40MT12D RoHS
- G3R40MT12D PDF Veri Sayfası
- G3R40MT12D Veri Sayfası
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- G3R40MT12D PDF
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- G3R40MT12D Teknik veri
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