Parça numarası G3R20MT12N Üretici firma GeneSiC Semiconductor Kategoriler MOSFET RoHS Veri Sayfası G3R20MT12N Açıklama MOSFET 1200V 20mO SOT-227 G3R SiC MOSFET
Üretici firma GeneSiC Semiconductor Kategoriler MOSFET Channel Mode Enhancement Id - Continuous Drain Current 93 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-227 Packaging Tube Pd - Power Dissipation 338 W Qg - Gate Charge 180 nC Rds On - Drain-Source Resistance 20 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V