TP65H050G4BS

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Parça numarası: TP65H050G4BS

Üretici firma: Transphorm

Kategoriler: MOSFET

RoHS

Veri Sayfası: TP65H050G4BS

Açıklama: MOSFET GAN FET 650V 34A TO263

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Özellikler

Üretici firma: Transphorm

Kategoriler: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TO-263-3

Packaging: Bulk

Pd - Power Dissipation: 119 W

Qg - Gate Charge: 16 nC

Rds On - Drain-Source Resistance: 60 mOhms

Technology: SI

Transistor Polarity: P-Channel

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V

Porduct Kategorisi

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Son Yorumlar

Kendi Reivew'inizi yazın

My package arrived wet, not know where occurs this fact, but working all right

Eddy Hustinx

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Boris Arshinov

Quickly came to CET, all in one package. Look at the rules

Earl Sault

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

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